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this is information on a product in full production. october 2012 doc id 023781 rev 1 1/14 14 STL10DN15F3 n-channel 150 v, 0.20 typ., 2.8 a stripfet? iii power mosfet in a powerflat? 5x6 double island package datasheet ? production data features improved die-to-footprint ratio very low profile package (1 mm max) very low thermal resistance low on-resistance applications switching applications description this device is an n-channel enhancement mode power mosfet produced using stmicroelectronics? stripfet? iii technology, which is specifically designed to minimize on- resistance and gate charge to provide superior switching performance. figure 1. internal schematic diagram order code v ds @ t jmax r ds(on) max i d STL10DN15F3 150 v <0.22 2.8 a powerflat tm 5x6 double island table 1. device summary order code marking package packaging STL10DN15F3 10dn15f3 powerflat? 5x6 double island tape and reel www.st.com
contents STL10DN15F3 2/14 doc id 023781 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STL10DN15F3 electrical ratings doc id 023781 rev 1 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 150 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according r thj-c drain current (continuous) at t c = 25 c 10 a i d (2) 2. the value is rated according r thj-pcb drain current (continuous) at t pcb = 25 c 2.8 a i d (1) drain current (continuous) at t c = 100 c 6.25 a i d (2) drain current (continuous) at t pcb = 100 c 1.8 a i dm (3) 3. pulse width limited by safe operating area drain current (pulsed) 11.2 a p tot (1) total dissipation at t c = 25 c 50 w p tot (2) total dissipation at t pcb = 25 c 3.5 w t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case 2.5 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec thermal resistance junction-pcb 35 c/w table 4. avalanche data symbol parameter value unit i as avalanche current repetitive or not repetitive, (pulse width limited by t j max ) 1.4 a e as single pulse avalanche energy (starting tj=25 c, i d =i as , v dd = 120 v) 150 mj
electrical characteristics STL10DN15F3 4/14 doc id 023781 rev 1 2 electrical characteristics (t case =25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 150 v i dss zero gate voltage drain current (v gs = 0) v ds = 150 v, v ds = 150 v, t c =125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 24v r ds(on) static drain-source on resistance v gs = 10 v, i d = 1.4 a 0.20 0.22 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs =0 - 330 60 15 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =75 v, i d = 2.8 a v gs =10 v (see figure 14) - 9.5 1.5 4.3 - nc nc nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =75 v, i d = 1.4 a, r g = 4.7 , v gs =10 v (see figure 13) - 5.5 2.4 16.1 5.5 - ns ns ns ns
STL10DN15F3 electrical characteristics doc id 023781 rev 1 5/14 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 2.8 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 11.2 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 2.8 a, v gs =0 -1.3v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2.8 a, di/dt = 100 a/s, v dd =120 v, tj=150 c - 73.5 210 5.7 ns nc a
electrical characteristics STL10DN15F3 6/14 doc id 023781 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100m s 10m s tj=150c tc=25c s ingle p u l s e 1 s 0.01 100 am15 3 76v1 10 zthj - pcb = k * rthj - pcb - 3 10 -1 10 -2 1 10 1 t ( s ) p 10 - 3 10 -2 10 -1 k s ingle p u l s e =0.5 0.01 0.02 0.05 0.1 0.2 am15 3 97v1 i d 12 8 4 0 0 2 v d s (v) 6 (a) 4 16 3 v 4v 5v v g s =10v 6v 8 am15 3 77v1 i d 16 12 4 0 0 6 v g s (v) (a) 2 8 4 v d s =10 v 8 am15 3 7 8 v1 v g s 6 4 2 0 0 2 q g (nc) (v) 8 4 6 10 v d s =75v i d =2. 8 a 8 10 12 am15 3 79v1 r d s (on) 204 202 200 19 8 0 1 i d (a) ( ) 0.5 1.5 206 20 8 v g s =10v 2 2.5 3 am15 3 96v1
STL10DN15F3 electrical characteristics doc id 023781 rev 1 7/14 figure 8. capacitance variations figure 9. normalized on-resistance vs temperature figure 10. normalized gate threshold voltage vs temperature figure 11. normalized b vdss vs temperature figure 12. source-drain diode forward characteristics c 100 1 0 40 v d s (v) (pf) 8 0 ci ss co ss cr ss 10 f= 1 mhz 120 am15 38 0v1 r d s (on) 2.4 2 0. 8 0.4 -75 25 t j (c) (norm) -25 75 125 1.2 1.6 i d = 1.5 a v g s = 10 v am15 38 1v1 t j (c) i d =250 a 1.1 1 0.7 0.6 -75 25 -25 75 125 0. 8 0.9 v g s (th) (norm) am15 383 v1 v d s t j (c) (norm) i d = 1ma 1.1 1.06 0.94 0.9 -75 25 -25 75 125 0.9 8 1.02 am15 38 2v1 v s d 0 2 i s d (a) (v) 1 3 4 0.4 0.6 0. 8 1 t j =-55c t j =175c t j =25c am15 3 95v1
test circuits STL10DN15F3 8/14 doc id 023781 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL10DN15F3 package mechanical data doc id 023781 rev 1 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL10DN15F3 10/14 doc id 023781 rev 1 table 9. powerflat? 5x6 - 8 leads dual pad (ribbon) mechanical data ref. dimensions (mm) min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d5.20 e6.15 d2 1.68 1.88 e2 3.50 3.70 d3 1.68 1.88 e3 3.50 3.70 e4 0.55 0.75 e1.27 l 0.725 1.025 k 1.05 1.35
STL10DN15F3 package mechanical data doc id 023781 rev 1 11/14 figure 19. powerflat? 5x6 - 8 leads dual pad drawing (dimensions are in mm) bottom view s ide view top view 8 256945_clip_rev.e
package mechanical data STL10DN15F3 12/14 doc id 023781 rev 1 figure 20. powerflat? 5x6 - 8 leads dual pad drawing recommended footprint (dimensions are in mm) footprint_clip
STL10DN15F3 revision history doc id 023781 rev 1 13/14 5 revision history table 10. document revision history date revision changes 27-sep-2012 1 first release. 15-oct-2012 2 ?r thj-case has been updated in table 3 ? updated section 4: package mechanical data . ? minor text changes on cover page
STL10DN15F3 14/14 doc id 023781 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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